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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SIHG15N60E-GE3

SIHG15N60E-GE3 - THT N channel transistors

SIHG15N60E-GE3
Description

Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 9.6A
Pulsed drain current 39A
Power dissipation 180W
Case TO247AC
Gate-source voltage ±30V
On-state resistance 0.28Ω
Mounting THT
Gate charge 78nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat