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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SIHF9530S-GE3

SIHF9530S-GE3 - SMD P channel transistors

SIHF9530S-GE3
Description

Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -8.2A
Pulsed drain current -48A
Power dissipation 88W
Case D2PAK
TO263
Gate-source voltage ±20V
On-state resistance 0.3Ω
Mounting SMD
Gate charge 38nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat