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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / SIHF30N60E-GE3

SIHF30N60E-GE3 - THT N channel transistors

SIHF30N60E-GE3
Description

Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 650V
Drain current 18A
Pulsed drain current 676A
Power dissipation 37W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 0.125Ω
Mounting THT
Gate charge 130nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat