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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIHD14N60E-GE3

SIHD14N60E-GE3 - SMD N channel transistors

SIHD14N60E-GE3
Description

Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 8A
Pulsed drain current 32A
Power dissipation 147W
Case DPAK
TO252
Gate-source voltage ±30V
On-state resistance 309mΩ
Mounting SMD
Gate charge 64nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat