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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIHB22N60E-GE3

SIHB22N60E-GE3 - SMD N channel transistors

SIHB22N60E-GE3
Description

Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 21A
Pulsed drain current 56A
Power dissipation 227W
Case D2PAK
TO263
Gate-source voltage ±30V
On-state resistance 0.18Ω
Mounting SMD
Gate charge 86nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat