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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SIHB100N60E-GE3

SIHB100N60E-GE3 - SMD N channel transistors

SIHB100N60E-GE3
Description

Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 73A; 208W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 19A
Pulsed drain current 73A
Power dissipation 208W
Case D2PAK
TO263
Gate-source voltage ±30V
On-state resistance 0.1Ω
Mounting SMD
Gate charge 50nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat