SIHA24N80AE-GE3 - THT N channel transistors

SIHA24N80AE-GE3
Description

Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 5A
Pulsed drain current 51A
Power dissipation 35W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 184mΩ
Mounting THT
Gate charge 89nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat