SIHA15N60E-E3 - THT N channel transistors

SIHA15N60E-E3
Description

Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 600V
Drain current 9.6A
Pulsed drain current 39A
Power dissipation 34W
Case TO220FP
Gate-source voltage ±30V
On-state resistance 0.28Ω
Mounting THT
Gate charge 76nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat