SIA517DJ-T1-GE3 - Multi channel transistors

SIA517DJ-T1-GE3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-12V; 4.5/-4.5A

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 12/-12V
Drain current 4.5/-4.5A
Power dissipation 6.5W
Case PowerPAK® SC70
Gate-source voltage ±8V
On-state resistance 170/65mΩ
Mounting SMD
Gate charge 20/15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat