Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / SI9933CDY-T1-GE3

SI9933CDY-T1-GE3 - Multi channel transistors

SI9933CDY-T1-GE3
Description

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -20V
Drain current -4A
Pulsed drain current -20A
Power dissipation 3.1W
Case SO8
Gate-source voltage ±12V
On-state resistance 94mΩ
Mounting SMD
Gate charge 26nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat