SI9926CDY-T1-GE3 - Multi channel transistors

SI9926CDY-T1-GE3
Description

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.7A; Idm: 30A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 20V
Drain current 6.7A
Pulsed drain current 30A
Power dissipation 2W
Case SO8
Gate-source voltage ±12V
On-state resistance 22mΩ
Mounting SMD
Gate charge 33nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat