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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI8487DB-T1-E1

SI8487DB-T1-E1 - SMD P channel transistors

SI8487DB-T1-E1
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.4A; 1.8/0.73W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -6.4A
Power dissipation 1.8/0.73W
Case MICROFOOT® 1.6x1.6
Gate-source voltage ±12V
On-state resistance 45mΩ
Mounting SMD
Gate charge 80nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat