SI7461DP-T1-GE3 - SMD P channel transistors

SI7461DP-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.6A; Idm: -60A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -8.6A
Pulsed drain current -60A
Power dissipation 1.2W
Case PowerPAK® SO8
Gate-source voltage ±20V
On-state resistance 14.5mΩ
Mounting SMD
Gate charge 0.19µC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat