SI5618A-TP - SMD P channel transistors

SI5618A-TP
Description

Transistor: P-MOSFET; Trench; unipolar; -60V; -1.6A; Idm: -8A; 1.2W

Specifications
Manufacturer MICRO COMMERCIAL COMPONENTS
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -60V
Drain current -1.6A
Pulsed drain current -8A
Power dissipation 1.2W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.24Ω
Mounting SMD
Gate charge 10.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat