SI5618-TP - SMD P channel transistors

SI5618-TP
Description

Transistor: P-MOSFET; unipolar; -60V; -1.2A; Idm: -7.6A; 830mW

Specifications
Manufacturer MICRO COMMERCIAL COMPONENTS
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -1.2A
Pulsed drain current -7.6A
Power dissipation 0.83W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.2Ω
Mounting SMD
Gate charge 9.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat