SI4948BEY-T1-GE3 - Multi channel transistors

SI4948BEY-T1-GE3
Description

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -2.4A
Pulsed drain current -25A
Power dissipation 0.95W
Case SO8
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 22nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat