Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / SI4936CDY-T1-GE3

SI4936CDY-T1-GE3 - Multi channel transistors

SI4936CDY-T1-GE3
Description

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 4.6A
Pulsed drain current 20A
Power dissipation 1.5W
Case SO8
Gate-source voltage ±20V
On-state resistance 50mΩ
Mounting SMD
Gate charge 9nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat