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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / SI4925DDY-T1-GE3

SI4925DDY-T1-GE3 - Multi channel transistors

SI4925DDY-T1-GE3
Description

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -5.9A
Power dissipation 5W
Case SO8
Gate-source voltage ±20V
On-state resistance 41mΩ
Mounting SMD
Gate charge 50nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat