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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI4850EY-T1-E3

SI4850EY-T1-E3 - SMD N channel transistors

SI4850EY-T1-E3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 6A
Pulsed drain current 40A
Power dissipation 1.2W
Case SO8
Gate-source voltage ±20V
On-state resistance 22mΩ
Mounting SMD
Gate charge 27nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat