SI4848DY-T1-E3 - SMD N channel transistors

SI4848DY-T1-E3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 150V
Drain current 3.7A
Pulsed drain current 25A
Power dissipation 3W
Case SO8
Gate-source voltage ±20V
On-state resistance 95mΩ
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat