SI4599DY-T1-GE3 - Multi channel transistors

SI4599DY-T1-GE3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 40/-40V; 6.8/-5.8A

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40/-40V
Drain current 6.8/-5.8A
Power dissipation 3.1/3W
Case SO8
Gate-source voltage ±20V
On-state resistance 62/42.5mΩ
Mounting SMD
Gate charge 38/20nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat