SI4532CDY-T1-GE3 - Multi channel transistors

SI4532CDY-T1-GE3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30/-30V
Drain current 4.9/-3.4A
Power dissipation 1.78W
Case SO8
Gate-source voltage ±20V
On-state resistance 47/89mΩ
Mounting SMD
Gate charge 9/12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat