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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI4435DYTRPBF

SI4435DYTRPBF - SMD P channel transistors

SI4435DYTRPBF
Description

Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8

Specifications
Manufacturer INFINEON TECHNOLOGIES
Type of transistor P-MOSFET
Technology HEXFET®
Polarisation unipolar
Drain-source voltage -30V
Drain current -6.4A
Pulsed drain current -50A
Power dissipation 2.5W
Case SO8
Gate-source voltage ±20V
On-state resistance 20mΩ
Mounting SMD
Kind of channel enhancement
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Development and design: Seventh Cat