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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI4403DDY-T1-GE3

SI4403DDY-T1-GE3 - SMD P channel transistors

SI4403DDY-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12.3A; 3.2W; SO8

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -20V
Drain current -12.3A
Power dissipation 3.2W
Case SO8
Gate-source voltage ±8V
On-state resistance 14mΩ
Mounting SMD
Gate charge 39nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat