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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / SI4288DY-T1-GE3

SI4288DY-T1-GE3 - Multi channel transistors

SI4288DY-T1-GE3
Description

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 7.4A; 3.1W; SO8

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET x2
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 7.4A
Power dissipation 3.1W
Case SO8
Gate-source voltage ±20V
On-state resistance 20mΩ
Mounting SMD
Gate charge 4.9nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat