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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI4178DY-T1-GE3

SI4178DY-T1-GE3 - SMD N channel transistors

SI4178DY-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 6.7A; 5W; SO8

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 6.7A
Power dissipation 5W
Case SO8
Gate-source voltage ±25V
On-state resistance 33mΩ
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat