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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI4174DY-T1-GE3

SI4174DY-T1-GE3 - SMD N channel transistors

SI4174DY-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 13.5A; 3.2W; SO8

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30V
Drain current 13.5A
Power dissipation 3.2W
Case SO8
Gate-source voltage ±20V
On-state resistance 9.5mΩ
Mounting SMD
Gate charge 8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat