SI3585CDV-T1-GE3 - Multi channel transistors

SI3585CDV-T1-GE3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 3.1/-1.7A

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 20/-20V
Drain current 3.1/-1.7A
Power dissipation 0.9/8W
Case TSOP6
Gate-source voltage ±12V
On-state resistance 78/316mΩ
Mounting SMD
Gate charge 4.8/9nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat