SI3552DV-T1-E3 - Multi channel transistors

SI3552DV-T1-E3
Description

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 2.5/-1.8A

Specifications
Manufacturer VISHAY
Type of transistor N/P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 30/-30V
Drain current 2.5/-1.8A
Pulsed drain current -7...8A
Power dissipation 1.15W
Case TSOP6
Gate-source voltage ±20V
On-state resistance 360/175mΩ
Mounting SMD
Gate charge 3.6/3.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat