Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI3460DDV-T1-GE3

SI3460DDV-T1-GE3 - SMD N channel transistors

SI3460DDV-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 20V
Drain current 7.9A
Pulsed drain current 20A
Power dissipation 1.7W
Case TSOP6
Gate-source voltage ±8V
On-state resistance 28mΩ
Mounting SMD
Gate charge 18nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat