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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI3458BDV-T1-GE3

SI3458BDV-T1-GE3 - SMD N channel transistors

SI3458BDV-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 4.1A; Idm: 10A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 60V
Drain current 4.1A
Pulsed drain current 10A
Power dissipation 3.3W
Case TSOP6
Gate-source voltage ±20V
On-state resistance 128mΩ
Mounting SMD
Gate charge 11nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat