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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI3440DV-T1-GE3

SI3440DV-T1-GE3 - SMD N channel transistors

SI3440DV-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 150V
Drain current 1.2A
Pulsed drain current 6A
Power dissipation 1.14W
Case TSOP6
Gate-source voltage ±20V
On-state resistance 0.4Ω
Mounting SMD
Gate charge 8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat