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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI3407DV-T1-GE3

SI3407DV-T1-GE3 - SMD P channel transistors

SI3407DV-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -25A; 4.2W; TSOP6

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -8A
Pulsed drain current -25A
Power dissipation 4.2W
Case TSOP6
Gate-source voltage ±12V
On-state resistance 32.7mΩ
Mounting SMD
Gate charge 63nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat