Found: products for your request ''
Show all results
No results found for your query. Try changing the search criteria.
Sign In
0
Home
About Us
Delivery and Payment
Contacts
Our Brands
Warehouse Stock
Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2369DS-T1-GE3

SI2369DS-T1-GE3 - SMD P channel transistors

SI2369DS-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -7.6A
Pulsed drain current -80A
Power dissipation 1.6W
Case SOT23
Gate-source voltage ±20V
On-state resistance 29mΩ
Mounting SMD
Gate charge 36nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat