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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI2366DS-T1-GE3

SI2366DS-T1-GE3 - SMD N channel transistors

SI2366DS-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 5.8A
Pulsed drain current 20A
Power dissipation 1.3W
Case SOT23
Gate-source voltage ±20V
On-state resistance 36mΩ
Mounting SMD
Gate charge 10nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat