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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI2356DS-T1-GE3

SI2356DS-T1-GE3 - SMD N channel transistors

SI2356DS-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 4.3A; Idm: 20A

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 40V
Drain current 4.3A
Pulsed drain current 20A
Power dissipation 1.7W
Case SOT23
Gate-source voltage ±12V
On-state resistance 70mΩ
Mounting SMD
Gate charge 13nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat