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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2333-TP

SI2333-TP - SMD P channel transistors

SI2333-TP
Description

Transistor: P-MOSFET; Trench; unipolar; -12V; -6A; Idm: -20A; 1.1W

Specifications
Manufacturer MICRO COMMERCIAL COMPONENTS
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -12V
Drain current -6A
Pulsed drain current -20A
Power dissipation 1.1W
Case SOT23
Gate-source voltage ±8V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 14nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat