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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2329DS-T1-GE3

SI2329DS-T1-GE3 - SMD P channel transistors

SI2329DS-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -8V
Drain current -6A
Power dissipation 1.6W
Case SOT23
Gate-source voltage ±5V
On-state resistance 30mΩ
Mounting SMD
Gate charge 11.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat