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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2319DS-T1-GE3

SI2319DS-T1-GE3 - SMD P channel transistors

SI2319DS-T1-GE3
Description

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage -40V
Drain current -2.4A
Pulsed drain current -12A
Power dissipation 0.8W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.13Ω
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat