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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2315BDS-T1-GE3

SI2315BDS-T1-GE3 - SMD P channel transistors

SI2315BDS-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 1.19W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -12V
Drain current -3A
Pulsed drain current -12A
Power dissipation 1.19W
Case SOT23
Gate-source voltage ±8V
On-state resistance 0.1Ω
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat