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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI2312CDS-T1-GE3

SI2312CDS-T1-GE3 - SMD N channel transistors

SI2312CDS-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 20V
Drain current 5.1A
Power dissipation 1.3W
Case SOT23
Gate-source voltage ±8V
On-state resistance 41.4mΩ
Mounting SMD
Gate charge 8.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat