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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2309CDS-T1-GE3

SI2309CDS-T1-GE3 - SMD P channel transistors

SI2309CDS-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -60V; -1.3A; Idm: -8A; 1.7W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -1.3A
Pulsed drain current -8A
Power dissipation 1.7W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.45Ω
Mounting SMD
Gate charge 4.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat