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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI2308BDS-T1-E3

SI2308BDS-T1-E3 - SMD N channel transistors

SI2308BDS-T1-E3
Description

Transistor: N-MOSFET; unipolar; 60V; 1.8A; Idm: 8A; 1.06W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 1.8A
Pulsed drain current 8A
Power dissipation 1.06W
Case SOT23
Gate-source voltage ±20V
On-state resistance 192mΩ
Mounting SMD
Gate charge 6.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat