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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI2306BDS-T1-E3

SI2306BDS-T1-E3 - SMD N channel transistors

SI2306BDS-T1-E3
Description

Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 3.5A
Pulsed drain current 20A
Power dissipation 1.25W
Case SOT23
Gate-source voltage ±20V
On-state resistance 65mΩ
Mounting SMD
Gate charge 4.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat