SI2305B-TP - SMD P channel transistors

SI2305B-TP
Description

Transistor: P-MOSFET; Trench; unipolar; -20V; -4.2A; 1.4W; SOT23

Specifications
Manufacturer MICRO COMMERCIAL COMPONENTS
Type of transistor P-MOSFET
Technology Trench
Polarisation unipolar
Drain-source voltage -20V
Drain current -4.2A
Power dissipation 1.4W
Case SOT23
Gate-source voltage ±8V
On-state resistance 80mΩ
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat