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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / SI2303CDS-T1-GE3

SI2303CDS-T1-GE3 - SMD P channel transistors

SI2303CDS-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -2.7A
Pulsed drain current -10A
Power dissipation 1.5W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.19Ω
Mounting SMD
Gate charge 8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat