SI1442DH-T1-GE3 - SMD N channel transistors

SI1442DH-T1-GE3
Description

Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 4A; Idm: 20A; 2.8W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Technology TrenchFET®
Polarisation unipolar
Drain-source voltage 12V
Drain current 4A
Pulsed drain current 20A
Power dissipation 2.8W
Case SC70-6
SOT363
Gate-source voltage ±8V
On-state resistance 30mΩ
Mounting SMD
Gate charge 33nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat