SI1317DL-T1-GE3 - SMD P channel transistors

SI1317DL-T1-GE3
Description

Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -6A; 0.5W

Specifications
Manufacturer VISHAY
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -20V
Drain current -1.4A
Pulsed drain current -6A
Power dissipation 0.5W
Case SC70
SOT323
Gate-source voltage ±8V
On-state resistance 0.27Ω
Mounting SMD
Gate charge 6.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat