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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / SI1308EDL-T1-GE3

SI1308EDL-T1-GE3 - SMD N channel transistors

SI1308EDL-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 30V; 1.4A; Idm: 6A; 0.3W; ESD

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 1.4A
Pulsed drain current 6A
Power dissipation 0.3W
Case SC70
SOT323
Gate-source voltage ±12V
On-state resistance 132mΩ
Mounting SMD
Gate charge 4.1nC
Kind of package reel
tape
Kind of channel enhancement
Version ESD
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Development and design: Seventh Cat