SI1302DL-T1-GE3 - SMD N channel transistors

SI1302DL-T1-GE3
Description

Transistor: N-MOSFET; unipolar; 30V; 0.48A; Idm: 1.5A; 0.18W

Specifications
Manufacturer VISHAY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 0.48A
Pulsed drain current 1.5A
Power dissipation 0.18W
Case SC70
SOT323
Gate-source voltage ±20V
On-state resistance 0.48Ω
Mounting SMD
Gate charge 1.4nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat